Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Recent advances in 2D TMD circular photo-galvanic effects
Ist Teil von
Nanoscale, 2023-02, Vol.15 (8), p.3651-3665
Ort / Verlag
England: Royal Society of Chemistry
Erscheinungsjahr
2023
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Two-dimensional (2D) layered semiconductors are appealing materials for high-specific-power photovoltaic systems due to their unique optoelectronic properties. The 2D materials can be naturally thin, and their properties can be altered in a variety of ways. Therefore, these materials may be used to develop high-performance opto-spintronic and photovoltaic devices. The most recent and promising strategies were used to induce circular photo-galvanic effects (CPGEs) in 2D TMD materials with broken inversion symmetry. The majority of quantum devices were manufactured by mechanical exfoliation to investigate the electrical behavior of ultrathin 2D materials. The investigation of CPGEs in 2D materials could enable the exploration of spin-polarized optoelectronics to produce more energy-efficient computing systems. The current research on nanomaterial-based materials paves the way for developing materials to store, manipulate, and transmit information with better performance. Finally, this study concludes by summarizing the current challenges and prospects.
Two-dimensional (2D) layered semiconductors are appealing materials for high-specific-power photovoltaic systems due to their unique optoelectronic properties.