Details

Autor(en) / Beteiligte

• WHALL, T. E
• PARKER, E. H. C

Titel

Si/SiGe/Si pMOS performance : alloy scattering and other considerations

Ist Teil von

• Thin solid films, 2000-07, Vol.369 (1-2), p.297-305

Ort / Verlag

Lausanne: Elsevier Science

Erscheinungsjahr

2000

Quelle

Elsevier ScienceDirect Journals

Beschreibungen/Notizen

• The scattering of charge-carriers in pseudomorphic p-channel Si/SiGe /Si heterostructures is discussed. The room-temperature field-effect device performance is restricted by interface roughness and compositional inhomogeneity. The interface roughness scattering and compositional inhomogeneity are the major limiting factors in the carrier mobility of pseudomorphic p-channel metal oxide semiconductor (MOS) devices. The enhanced velocity overshoot effects are expected at short channel lengths. Improvement in interface and material quality with low source and drain resistances leads to further gains in performance.