Details

Autor(en) / Beteiligte

• Fürböck, C.
• Pogany, D.
• Litzenberger, M.
• Gornik, E.
• Seliger, N.
• Goßner, H.
• Müller-Lynch, T.
• Stecher, M.
• Werner, W.

Titel

Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices

Ist Teil von

• Journal of electrostatics, 2000-08, Vol.49 (3), p.195-213

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2000

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Breakdown homogeneity and triggering of bipolar transistor action are studied in Smart Power technology ESD protection devices via measurements of temperature distribution and thermal dynamics by a laser interferometric technique. Temperature changes in the devices biased in the avalanche multiplication or snapback region are monitored by ns-time scale measurements of the optical phase shift. The distribution of the temperature-induced phase shift is correlated with the position of ESD damage obtained by backside IR microscopy.