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Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
Ist Teil von
Japanese Journal of Applied Physics, 2000, Vol.39 (4R), p.1635-1641
Erscheinungsjahr
2000
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Authors have examined how fewer threading dislocations (TDs) in an underlying GaN epilayer affects the surface morphology of InGaN/InGaN quantum well (QW) structures grown by low-pressure MOVPE. When the GaN growth pressure was raised from 100 to 400 Torr, the density of pure edge and mixed character TDs was reduced due to the low-density formation and increase in the size of initially grown GaN islands. However, the density of pure screw TDs simultaneously increased. The QW surface morphology strongly depended on the densities of mixed or screw TDs in the underlying GaN epilayer. Authors found that the pit density in the surface of the QW structure decreased with a lower density of mixed TDs, and that the QW surface morphology then exhibited a pattern of large nanoscale islands if the density of screw TDs simultaneously increased, or a pattern of heavily bunched steps if it was unchanged. 33 refs.
Sprache
Englisch
Identifikatoren
ISSN: 0021-4922
eISSN: 1347-4065
DOI: 10.1143/JJAP.39.1635
Titel-ID: cdi_proquest_miscellaneous_27592775
Format
–
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