Microelectronic engineering, 2000, Vol.50 (1), p.265-270
2000
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Titel
- Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond ( invited)
- Ist Teil von
- Microelectronic engineering, 2000, Vol.50 (1), p.265-270
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2000
- Quelle
- Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
- Beschreibungen/Notizen
- This paper presents an overview of issues associated with Al dual damascene process technology. Different integration schemes are discussed and characteristics of metal fill, planarization and reliability are highlighted. Finally, a comparison is made between Al dual damascene, Al RIE, and Cu dual damascene.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0167-9317eISSN: 1873-5568DOI: 10.1016/S0167-9317(99)00291-9Titel-ID: cdi_proquest_miscellaneous_27552152
- Format
- –
- Schlagworte
- Applied sciences, Chemical mechanical polishing, CMP, Dual damascene, Electronics, Exact sciences and technology, Integration, Low- k dielectrics, Metallization, Microelectronic fabrication (materials and surfaces technology), Reliability, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices