Details

Autor(en) / Beteiligte

• Zhu, Maguang
• Lu, Peng
• Wang, Xuan
• Chen, Qian
• Zhu, Huiping
• Zhang, Yajie
• Zhou, Jianshuo
• Xu, Haitao
• Han, Zhengsheng
• Han, Jianwei
• Chen, Rui
• Li, Bo
• Peng, Lian‐Mao
• Zhang, Zhiyong

Titel

Ultra‐Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics

Ist Teil von

• Small (Weinheim an der Bergstrasse, Germany), 2023-01, Vol.19 (1), p.e2204537-n/a

Ort / Verlag

Germany: Wiley Subscription Services, Inc

Erscheinungsjahr

2023

Link zum Volltext

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• Carbon nanotube (CNT) field‐effect transistors (FETs) have been considered ideal building blocks for radiation‐hard integrated circuits (ICs), the demand for which is exponentially growing, especially in outer space exploration and the nuclear industry. Many studies on the radiation tolerance of CNT‐based electronics have focused on the total ionizing dose (TID) effect, while few works have considered the single event effects (SEEs) and displacement damage (DD) effect, which are more difficult to measure but may be more important in practical applications. Measurements of the SEEs and DD effect of CNT FETs and ICs are first executed and then presented a comprehensive radiation effect analysis of CNT electronics. The CNT ICs without special irradiation reinforcement technology exhibit a comprehensive radiation tolerance, including a 1 × 104 MeVcm2 mg−1 level of the laser‐equivalent threshold linear energy transfer (LET) for SEEs, 2.8 × 1013 MeV g−1 for DD and 2 Mrad (Si) for TID, which are at least four times higher than those in conventional radiation‐hardened ICs. The ultrahigh intrinsic comprehensive radiation tolerance will promote the applications of CNT ICs in high‐energy solar and cosmic radiation environments. In this work, a combination of single event effect, displacement damage and total ionizing dose irradiation tests are performed, demonstrating that carbon nanotube transistors feature superior comprehensive radiation effect tolerance compared to their Si counterparts. The ultra‐strong radiation tolerance promotes carbon nanotube integrated circuit's (IC) applications in high‐energy solar and cosmic radiation environments.