Details

Autor(en) / Beteiligte

• KITAYAMA, M
• HIRAO, K
• TORIYAMA, M
• KANZAKI, S

Titel

Thermal conductivity of β-Si3N4 : I, Effects of various microstructural factors

Ist Teil von

• Journal of the American Ceramic Society, 1999-11, Vol.82 (11), p.3105-3112

Ort / Verlag

Malden,MA: Blackwell

Erscheinungsjahr

1999

Quelle

Wiley Online Library All Journals

Beschreibungen/Notizen

• Calculations based on a simple modified Wiener's model for thermal conductivity of a composite material predict that the thermal conductivity of beta-Si3N4 decreases quickly as the grain-boundary film thickness increases within a range of a few tenths of a nanometer and also that it initially increases steeply with increased grain size, then reaches almost constant values. Because of the faceted nature of the beta-Si3N4 crystal, the average grain-boundary film thickness is much greater than that in equilibrium. The present study demonstrates both theoretically and experimentally that grain growth alone cannot improve the thermal conductivity of beta-Si3N4. (Author)