Details

Autor(en) / Beteiligte

• Kudo, Makoto
• Ouchi, Kiyoshi
• Kasai, Jun-ichi
• Mishima, Tomoyoshi

Titel

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

Ist Teil von

• Japanese Journal of Applied Physics, 2002-10, Vol.41 (10A), p.L1040-L1042

Erscheinungsjahr

2002

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• To reduce the lattice strain of 1.3 µm-range quantum well lasers on GaAs substrates, symmetric and type-II coupled double quantum wells with a GaAs/GaInAs/GaAsSb/GaInAs/GaAs layer structure were grown by molecular beam epitaxy. By using a `type II' band lineup, net lattice strain in the quantum well layers could be reduced to about 1.6% while maintaining a constant wavelength. Photoluminescence measurements on these quantum well layers revealed a linewidth of 50 meV at a 1.3-µm wavelength at room temperature and small dependence of peak wavelength on excitation power.