Details

Autor(en) / Beteiligte

• Kweon, S Y
• Kim, N K
• Choi, E S
• Yeom, S J
• Roh, J S
• Park, J S

Titel

OHMIC CONTACT PROPERTIES OF TUNGSTEN PLUG AND FERROELECTRIC PROPERTIES OF (Bi,La)4Ti3O12 THIN FILM IN STACKED CAPACITOR STRUCTURE

Ist Teil von

• Japanese Journal of Applied Physics, Part 1, 2002, Vol.41 (12), p.7327-7331

Erscheinungsjahr

2002

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A stacked Bi3.35La0.85Ti3O12 (BLT) capacitor with Pt/IrOx/Ir bottom electrode stack was integrated on a W plug up to metallization for mega-bit ferroelectric random access memory. The optimized BLT film was prepared using the metal-organic decomposition method and the total thermal budget during the integration was 2 h at 650 C in O ambient. For ensuring the thermal stability of the plug, the buried barrier structure was fabricated with both W recess and chemical-mechanical polishing of the TiN barrier layer. The robust W plug showed good ohmic contact behavior and the contact resistance was about 200 OHM/plug after metallization at the contact size of f 0.30 mu m. The electrical properties of the BLT capacitor were also evaluated via the plug after metallization. The remanent polarization was about 26 mu C/cm2 and the leakage current density was about 3 x 10-7 A/cm2 at the applied voltage of 3 V. Fatigue loss after 1 x 1011 cycles was about 3% at the switching voltage of 3 V. 11 refs.