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Dry cleaning process of crystalline silicon surface in aSi:H/cSi heterojunction for photovoltaic applications
Ist Teil von
Thin solid films, 2002-02, Vol.403, p.307-311
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
2002
Link zum Volltext
Quelle
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
Beschreibungen/Notizen
In this work we showed a comparison of the effect of H
2, CF
4/O
2, RF dry etching on the properties of the heterostructure device useful for photovoltaic application. To this aim we performed low temperature (50–300 K) capacitance measurements in a wide range of probe signal frequencies (10 Hz–10 kHz). Differences in the capacitance profile between samples with various plasma dry treatments indicated different defect density profile at interface. With the aid of a finite difference model of the capacitance as a function of temperature and frequency we extracted information about the defect distribution at interface, that greatly influence the photovoltaic properties of the devices. As a result, the density and the nature of defects at interface has been correlated to the technological parameters: wafer cleaning procedure, hydrogen plasma treatment, type and concentration of dopants at interface.