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Deposition of low-resistivity ITO on plastic substrates by DC arc-discharge ion plating
Ist Teil von
Thin solid films, 2002-05, Vol.411 (1), p.28-31
Ort / Verlag
Lausanne: Elsevier B.V
Erscheinungsjahr
2002
Link zum Volltext
Quelle
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
Beschreibungen/Notizen
Low-resistivity SnO
2 doped In
2O
3 (ITO) transparent conductive films were successfully deposited on SiO
2-coated plastic substrates using d.c. arc-discharge ion plating. A resistivity of 2.45×10
−4 Ω cm was achieved at a substrate temperature of 100 °C. The films had a polycrystalline structure with a [111] preferred orientation and the strongest peak was at (222). The average grain size of the films was approximately 500 nm. The visible transparency of the films was approximately 80%, and no deformation of the substrate was observed.