Solar energy materials and solar cells, 2001-03, Vol.67 (1), p.231-236
2001
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Details
- Autor(en) / Beteiligte
- Titel
- ZnO:Ga conducting-films grown by DC arc-discharge ionplating
- Ist Teil von
- Solar energy materials and solar cells, 2001-03, Vol.67 (1), p.231-236
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2001
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- For the first time, DC arc-discharge ionplating was used to grow low-resistivity ZnO:Ga conducting-films at high deposition rate. Low-resistivity ZnO:Ga conducting films were grown at a rate of over 100 Å/s by using DC arc-discharge ionplating at a discharge current of 150 A. The resistivity of this film was about 2×10 −4 Ω cm. The lowest film resistivity, 1.6×10 −4Ω cm, was obtained on an inexpensive soda lime glass substrate at 350°C in which the Ga content was about 4at%.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0927-0248eISSN: 1879-3398DOI: 10.1016/S0927-0248(00)00286-5Titel-ID: cdi_proquest_miscellaneous_27038764
- Format
- –
- Schlagworte
- Condensed matter: electronic structure, electrical, magnetic, and optical properties, Cross-disciplinary physics: materials science, rheology, DC arc-discharge, Electrodeposition, electroplating, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Electronic transport phenomena in thin films and low-dimensional structures, Exact sciences and technology, Growth rate, Ionplating, Low-field transport and mobility, piezoresistance, Materials science, Methods of deposition of films and coatings, film growth and epitaxy, Physics, Resistivity, ZnO:Ga 2O 3