Microelectronics and reliability, 2001-07, Vol.41 (7), p.973-975
2001
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Details
- Autor(en) / Beteiligte
- Titel
- The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices
- Ist Teil von
- Microelectronics and reliability, 2001-07, Vol.41 (7), p.973-975
- Ort / Verlag
- Elsevier Ltd
- Erscheinungsjahr
- 2001
- Quelle
- ScienceDirect
- Beschreibungen/Notizen
- The influence of the gate electrode p-polysilicon doping concentration on gate oxide breakdown data is investigated. It is shown that a small variation in doping concentration of p-doped polysilicon gates as well as an inversion layer in p-polysilicon gate strongly affects the results, if PMOS devices are stressed in inversion biasing mode by applying a constant current stress.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0026-2714eISSN: 1872-941XDOI: 10.1016/S0026-2714(01)00050-6Titel-ID: cdi_proquest_miscellaneous_26997630
- Format
- –