Details

Autor(en) / Beteiligte

• Sengiku, M
• Oda, Y
• Jiang, W
• Yatsui, K
• Ogura, Y
• Kato, K

Titel

PREPARATION OF SrAl2O4:Eu PHOSPHOR THIN FILMS BY INTENSE PULSED ION-BEAM EVAPORATION

Ist Teil von

• Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 2B, pp. 1035-1037. 2001, 2001, Vol.40 (2B), p.1035-1037

Erscheinungsjahr

2001

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• SrAl2O4:Eu thin films have been deposited on Si(100) or graphite substrates using an intense pulsed ion-beam evaporation technique. The results of XRD and photoluminescence suggest that SrAl2O4:Eu thin films which have a polycrystalline structure can be produced in vacuum, without substrate heating and annealing. The composition and morphology of the films have been analyzed by RBS and SEM. From RBS analysis, authors have obtained good stoichiometry between the target and the films prepared. 12 refs.