Details

Autor(en) / Beteiligte

• Mooney, M.B.
• Hurley, P.K.
• O'Sullivan, B.J.
• Beechinor, J.T.
• Zhang, J.-Y.
• Boyd, I.W.
• Kelly, P.V.
• Sénateur, J.-P.
• Crean, G.M.
• Jimenez, C.
• Paillous, M.

Titel

Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source

Ist Teil von

• Microelectronic engineering, 1999, Vol.48 (1), p.283-286

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

1999

Link zum Volltext

Quelle

ScienceDirect

Beschreibungen/Notizen

• We report the physical and electrical characteristics of the first tantalu pentoxide dielectric films as deposited by the new technique of low pressure ultraviolet-assisted injection liquid source (UVILS) chemical vapour deposition (UVILS-CVD) using the precursor tantalum tetraethoxy dimethylaminoethoxide (Ta(OEt) 4(dmae)). The films as deposited exhibit high leakage currents due to carbon impurities. Significant porosity is found at deposition temperatures below 350°C. Conventional CV characteristics are exhibited by thick (200 Å to 1000 Å) as-deposited films, with dielectric constants of 17.4 to 24.