Details

Autor(en) / Beteiligte

• Esmark, K
• Stadler, W
• Wendel, M
• Goßner, H
• Guggenmos, X
• Fichtner, W

Titel

Advanced 2D/3D ESD device simulation – a powerful tool already used in a pre-Si phase

Ist Teil von

• Microelectronics and reliability, 2001-11, Vol.41 (11), p.1761-1770

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2001

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The tremendous advantages of adequate 2D/3D device simulations for ESD optimization are demonstrated. The pre-silicon ESD-protection concept of a new CMOS technology was completely based on high-current I– V characteristics simulated for different NMOS variations. Silicon verification proved the excellent simulation quality of the electrical behavior and, furthermore, gives an idea of ESD thresholds and their dependencies on layout and technology parameters.