Details

Autor(en) / Beteiligte

• Caillat, C.
• Deleonibus, S.
• Guegan, G.
• Heitzmann, M.
• Nier, M.E.
• Tedesco, S.
• Dal'zotto, B.
• Martin, F.
• Mur, P.
• Papon, A.M.
• Lecarval, G.
• Previtali, B.
• Toffoli, A.
• Allain, F.
• Biswas, S.
• Jourdan, F.
• Fugier, P.
• Dichiaro, J.L.

Titel

A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching

Ist Teil von

• Solid-state electronics, 2002-03, Vol.46 (3), p.349-352

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2002

Link zum Volltext

Quelle

Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)

Beschreibungen/Notizen

• NMOSFET device with a physical gate length down to 20 nm and a 1.2 nm gate oxide was fabricated. E-beam lithography was combined with two-step hard-mask etching technique for gate patterning. It was found that the device operate down to 20 nm with an estimated channel length of 4 nm.