Details

Autor(en) / Beteiligte

• Nam, Choong-Mo
• Kwon, Young-Se

Titel

High-performance planar inductor on oxidized porous silicon (OPS) substrate

Ist Teil von

• IEEE microwave and guided wave letters, 1997-08, Vol.7 (8), p.236-238

Erscheinungsjahr

1997

Quelle

IEEE

Beschreibungen/Notizen

• To obtain a high-performance planar inductor, we used the oxidized porous silicon (OPS) layer with 25-micron-thick SiO2 as a substrate. The measured radio frequency (RF) performances of the planar inductor on the OPS layer are comparable to those on the semi-insulating GaAs substrate. For a 6.29-nH inductor, a resonant frequency of 13.8 GHz and a maximum quality factor (Q) of 13.3 are obtained. These results show that the utilization of the OPS layer can push silicon passive monolithic microwave integrated circuit (MMIC) technology at least up to 12 GHz. (Author)