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Autor(en) / Beteiligte
Titel
Enormous Berry-Curvature-Based Anomalous Hall Effect in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K
Ist Teil von
  • ACS nano, 2022-02, Vol.16 (2), p.2369-2380
Ort / Verlag
American Chemical Society
Erscheinungsjahr
2022
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
  • To realize the quantum anomalous Hall effect (QAHE) at elevated temperatures, the approach of magnetic proximity effect (MPE) was adopted to break the time-reversal symmetry in the topological insulator (Bi0.3Sb0.7)2Te3 (BST) based heterostructures with a ferrimagnetic insulator europium iron garnet (EuIG) of perpendicular magnetic anisotropy. Here we demonstrate large anomalous Hall resistance (R AHE) exceeding 8 Ω (ρ AHE of 3.2 μΩ·cm) at 300 K and sustaining to 400 K in 35 BST/EuIG samples, surpassing the past record of 0.28 Ω (ρ AHE of 0.14 μΩ·cm) at 300 K. The large R AHE is attributed to an atomically abrupt, Fe-rich interface between BST and EuIG. Importantly, the gate dependence of the AHE loops shows no sign change with varying chemical potential. This observation is supported by our first-principles calculations via applying a gradient Zeeman field plus a contact potential on BST. Our calculations further demonstrate that the AHE in this heterostructure is attributed to the intrinsic Berry curvature. Furthermore, for gate-biased 4 nm BST on EuIG, a pronounced topological Hall effect-like (THE-like) feature coexisting with AHE is observed at the negative top-gate voltage up to 15 K. Interface tuning with theoretical calculations has realized topologically distinct phenomena in tailored magnetic TI-based heterostructures.
Sprache
Englisch
Identifikatoren
ISSN: 1936-0851
eISSN: 1936-086X
DOI: 10.1021/acsnano.1c08663
Titel-ID: cdi_proquest_miscellaneous_2624655501
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