Details

Autor(en) / Beteiligte

• Mu, Feihu
• Dai, Benlin
• Wu, Yahui
• Yang, Gang
• Li, Shijie
• Zhang, Lili
• Xu, Jiming
• Liu, Yazi
• Zhao, Wei

Titel

2D/3D S-scheme heterojunction of carbon nitride/iodine-deficient bismuth oxyiodide for photocatalytic hydrogen production and bisphenol A degradation

Ist Teil von

• Journal of colloid and interface science, 2022-04, Vol.612, p.722-736

Ort / Verlag

United States: Elsevier Inc

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• For the first time, a novel 2D/3D g-C3N4/BiO1.2I0.6 heterojunction was successfully constructed, which showed significant photocatalytic activity through the S-scheme mechanism under visible light irradiation. [Display omitted] •The 2D/3D g-C3N4/BiO1.2I0.6 photocatalyst was constructed for the first time.•This photocatalyst showed excellent activity for hydrogen production and BPA degradation.•The high activity was caused by rapid electron transfer and S-scheme system.•The S-scheme mechanism was confirmed by IEF and band offsets. A novel 2D/3D S-scheme carbon nitride/iodine-deficient bismuth oxyiodide (g-C3N4/BiO1.2I0.6) heterojunction was constructed for the first time by calcining a mixture of g-C3N4 nanosheets and flower-like BiOI. Irradiated by visible light, this g-C3N4/BiO1.2I0.6 heterojunction exhibited excellent photocatalytic hydrogen production and BPA degradation activity with high cycle stability. In particular, the photocatalytic activity of 0.2-C3N4/BiO1.2I0.6 could reach 1402.7 μmol g-1 h−1 (hydrogen production rate) and 0.01155 min−1 (apparent rate of bisphenol A degradation), which were 3.5 and 3.2 times that of g-C3N4 respectively. The remarkable photocatalytic performance was due to the efficient charge separation of g-C3N4/BiO1.2I0.6 and the formation of S-scheme heterojunction, which maintained strong photocatalytic reduction and oxidation potentials. Noticeably, the charge density difference and band offsets of the g-C3N4/BiO1.2I0.6 were calculated. The results revealed that a built-in electric field (IEF) was created. The values of the valence band offset (ΔEVBO) and the conduction band offset (ΔECBO) were −0.84 and −1.27 eV, respectively, which further demonstrated the formation of S-scheme photocatalytic charge transfer mechanism.