Details

Autor(en) / Beteiligte

• Ong, T.P.
• Burger, D.
• Lewis, C.R.
• Campbell, B.D.
• Baldasaro, P.F.

Titel

Calculated performance of InAs thermovoltaic cells

Ist Teil von

• Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9), 1993, p.705-707

Ort / Verlag

IEEE

Erscheinungsjahr

1993

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• The performance of an InAs thermovoltaic (TV) cell based on a p-on-n junction architecture has been modeled for the 866 K to 1255 K temperature range. Cell efficiency as high as 23% using a filtered 1255 K blackbody as an intermediate emitter has been predicted. A reasonably high open circuit voltage (V/sub ocspl sim/0.2 V) and short circuit current (0.5-1 kA) can be achieved with moderate optical concentration. The thermal coefficient of V/sub oc/, /spl part/V/sub oc/spl part/T, of the cell has been evaluated to be greater than -1 mVspl deg/C. The modeling also shows that the use of a selective emitter results in a better TV cell performance by /spl sim/10% compared to ideal blackbody source.< >