Details

Autor(en) / Beteiligte

• Ueno, Y.
• Fujii, H.
• Sawano, H.
• Kobayashi, K.
• Hara, K.
• Gomyo, A.
• Endo, K.

Titel

30-mW 690-nm high-power strained-quantum-well AlGaInP laser

Ist Teil von

• IEEE journal of quantum electronics, 1993-06, Vol.29 (6), p.1851-1856

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

1993

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• A high-power 690-nm AlGaInP laser for use in a high-density rewritable-optical-disk memory system is presented. The deterioration of its temperature characteristics, which results from the high-power-oriented laser structure, is improved by using compressively strained GaInP quantum wells as the active layer. Output power of 40 mW is achieved up to 80 degrees C. Stable fundamental-transverse-mode operation is obtained up to 50 mW. Output-power-induced facet degradation is suppressed by an Al/sub 2/O/sub 3/ facet coating. The lasers operate stably at 30 mW at 50 degrees C for over 2600 h. The mean extrapolated lifetime is 10000 h.< >