Details

Autor(en) / Beteiligte

• Fathauer, R. W.
• George, T.
• Ksendzov, A.
• Vasquez, R. P.

Titel

Visible luminescence from silicon wafers subjected to stain etches

Ist Teil von

• Applied physics letters, 1992-02, Vol.60 (8), p.995-997

Ort / Verlag

Legacy CDMS: American Institute of Physics

Erscheinungsjahr

1992

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Etching of Si in a variety of solutions is known to cause staining. These stain layers consist of porous material similar to that produced by anodic etching of Si in HF solutions. In this work, photoluminescence peaked in the red from stain-etched Si wafers of different dopant types, concentrations, and orientations produced in solutions of HF:HNO3:H2O was observed. Luminescence is also observed in stain films produced in solutions of NaNO2 in HF, but not in stain films produced in solutions of CrO3 in HF. The luminescence spectra are similar to those reported recently for porous Si films produced by anodic etching in HF solutions. However, stain films are much easier to produce, requiring no special equipment.