Details

Autor(en) / Beteiligte

• Zhang, Yangyi
• Wang, Lixiang
• Chen, Jiaming
• Hou, Guozhi
• Li, Dongke
• Xu, Jun
• Xu, Ling
• Chen, Kunji

Titel

Multiple channels to enhance near-infrared emission from SiO2–SnO2:Er3+ films by Ba2+ ion doping

Ist Teil von

• Physical chemistry chemical physics : PCCP, 2021-10, Vol.23 (41), p.23711-23717

Ort / Verlag

Cambridge: Royal Society of Chemistry

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Ba2+ ions co-doped SiO2–SnO2:Er3+ thin films are prepared using a sol–gel method combined with a spin-coating technique and post-annealing treatment. The influence of Ba2+ ion doping on the photoluminescence properties of thin films is carefully investigated. The enhancement of near-infrared (NIR) emission of Er3+ ions by as much as 12 times is obtained via co-doping with Ba2+ ions. To illustrate the relevant mechanisms, X-ray diffraction, X-ray photoelectron spectroscopy and comprehensive spectroscopic measurements are carried out. The enhanced NIR emission induced by Ba2+ co-doping can be explained by more oxygen vacancies, improved crystallinity and strong cross-relaxation processes between Er3+ ions. The incorporation of Ba2+ ions into SiO2–SnO2:Er3+ thin films results in a considerable enhancement in the NIR emission, making the thin films more suitable for Si-based optical lasers and amplifiers.