Details

Autor(en) / Beteiligte

• BACHER, K
• PEZESHKI, B
• LORD, S. M
• HARRIS, J. S

Titel

Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections

Ist Teil von

• Applied physics letters, 1992-09, Vol.61 (12), p.1387-1389

Ort / Verlag

Melville, NY: American Institute of Physics

Erscheinungsjahr

1992

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We demonstrate a novel approach to the molecular beam epitaxial (MBE) growth of vertical Fabry–Perot cavities with quarter-wave mirrors. At two selected points, the growth is interrupted and the reflectivity spectrum is measured without removing the wafer from the vacuum system. Corrections are then made in the growth of subsequent layers. By making measurements on the incomplete structure, separate corrections can be made to center both the mirror reflectivity and the cavity resonance at the desired wavelength. We present theoretical and experimental data demonstrating the effectiveness of the approach, and estimate the effects on device performance.