Details

Autor(en) / Beteiligte

• MAEDA, Y
• TSUKAMOTO, N
• YAZAWA, Y
• KANEMITSU, Y
• MASUMOTO, Y

Titel

Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices

Ist Teil von

• Applied physics letters, 1991-12, Vol.59 (24), p.3168-3170

Ort / Verlag

Melville, NY: American Institute of Physics

Erscheinungsjahr

1991

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Ge microcrystals embedded in SiO2 glassy matrices were formed by a radio-frequency magnetron cosputtering technique and then annealed at 800 °C for 30 min. The average radius of the Ge microcrystals in SiO2 was determined to be about 3 nm by means of Raman spectroscopy and high resolution electron microscope. The annealed sample showed a strong room temperature luminescence with a peak at 2.18 eV. This is consistent with quantum confinement of electrons and holes.