Details

Autor(en) / Beteiligte

• Huq, S.E.
• Blamire, M.G.
• Evetts, J.E.
• Hasko, D.G.
• Ahmed, H.

Titel

Fabrication of sub-micron whole-wafer SIS tunnel junctions for millimeter wave mixers

Ist Teil von

• IEEE transactions on magnetics, 1991-03, Vol.27 (2), p.3161-3164

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

1991

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• As part of a program for the development of a space-qualified submillimeter-wave mixer operating in the region of one terahertz, the authors have developed processes for the fabrication of submicron whole-wafer tunnel junctions. Using the self-aligned whole-wafer process (SAWW) with electron beam lithography they have been able to reliably fabricate high-quality (V/sub m/>20 mV) submicron tunnel junctions from whole-wafer Nb/AlO/sub x//Nb structures. In particular, it is shown that the junction quality is independent of size down to 0.3 mu m/sup 2/ junction area. The problems of film stress, anodization, registration for electron beam lithography, and lift-off, which limit the yield of good quality submicron-scale junctions are addressed.