Details

Autor(en) / Beteiligte

• Blamire, M.G.
• Somekh, R.E.
• Morris, G.W.
• Evetts, J.E.

Titel

Characteristics of vertically-stacked planar tunnel junction structures

Ist Teil von

• IEEE transactions on magnetics, 1989-03, Vol.25 (2), p.1135-1138

Ort / Verlag

IEEE

Erscheinungsjahr

1989

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Whole-wafer multilayer tunnel structures consisting of vertically stacked Al/sub 2/O/sub 3/ tunnel barriers separated by thin Nb layers have been deposited under UHV (ultrahigh vacuum) conditions, with repeat distances ranging from 10-50 nm. Using a modification of the conventional SNEP process, these structures have been fabricated into vertical series arrays. Using this technique it is possible to select different numbers of junctions on the same substrate and so determine the properties of each barrier. Information gained from such structures provides a considerable insight into the factors determining junction characteristics such as critical current density and quality as well as serving as the basis for the study of novel types of structures and devices.< >