Details

Autor(en) / Beteiligte

• Reeson, K.J.
• Robinson, A.K.
• Hemment, P.L.F.
• Marsh, C.D.
• Christensen, K.N.
• Booker, G.R.
• Chater, R.J.
• Kilner, J.A.
• Harbeke, G.
• Steigmeir, E.F.
• Celler, G.K.

Titel

The role of implantation temperature and dose in the control of the microstructure of SIMOX structures

Ist Teil von

• Microelectronic engineering, 1988, Vol.8 (3), p.163-186

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

1988

Quelle

Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)

Beschreibungen/Notizen

• Single-crystal ⇇100↩ silicon wafers have been implanted with 200 keV oxygen ions over a dose range of 0.1×10 18 O + cm -2 to 1.4×10 18 O + cm -2 and a temperature range of ≈250°C to 550°C. The specimens have been analyzed, both before and after high-temperature annealing, using a variety of techniques, such as cross-sectional and planar Transmission Electron Microscopy (TEM), Rutherford backscattering (RBS), and ion channelling, Secondary Ion Mass Spectroscopy (SIMS), Infra-red Spectroscopy (IR), and Raman Spectroscopy. This has enabled us to evaluate the development of the SIMOX structure both with respect to implantation temperature and dose and also with respect to annealing temperature and time.