Details

Autor(en) / Beteiligte

• Barati, Fatemeh
• Thompson, Josh P
• Dartiailh, Matthieu C
• Sardashti, Kasra
• Mayer, William
• Yuan, Joseph
• Wickramasinghe, Kaushini
• Watanabe, Kenji
• Taniguchi, Takashi
• Churchill, Hugh
• Shabani, Javad

Titel

Tuning Supercurrent in Josephson Field-Effect Transistors Using h‑BN Dielectric

Ist Teil von

• Nano letters, 2021-03, Vol.21 (5), p.1915-1920

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2021

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Epitaxial Al-InAs heterostructures appear as a promising materials platform for exploring mesoscopic and topological superconductivity. A unique property of Josephson junction field effect transistors (JJ-FETs) fabricated on these heterostructures is the ability to tune the supercurrent using a metallic gate. Here, we report the fabrication and measurement of gate-tunable Al-InAs JJ-FETs in which the gate dielectric in contact with the InAs is produced by mechanically exfoliated hexagonal boron nitride (h-BN) followed by dry transfer. We discuss a versatile fabrication process that enables compatibility between layered material transfer and Al-InAs heterostructures that allows us to achieve full gate-tunability of supercurrent by using only 5 nm thick h-BN flakes. Our study shows that pristine properties of epitaxial Josephson junctions, such as product of normal resistance and critical current, I c R n, are preserved. Furthermore, complementary measurements confirm that using h-BN dielectric changes the channel density less when compared to atomic layer deposition of Al2O3.