Details

Autor(en) / Beteiligte

• Zhang, Mingxing
• Liang, Chengyu
• Cheng, Guo‐Dong
• Chen, Junchang
• Wang, Yumin
• He, Linwei
• Cheng, Liwei
• Gong, Shicheng
• Zhang, Duo
• Li, Jiong
• Hu, Shu‐Xian
• Diwu, Juan
• Wu, Guozhong
• Wang, Yaxing
• Chai, Zhifang
• Wang, Shuao

Titel

Intrinsic Semiconducting Behavior in a Large Mixed‐Valent Uranium(V/VI) Cluster

Ist Teil von

• Angewandte Chemie International Edition, 2021-04, Vol.60 (18), p.9886-9890

Auflage

International ed. in English

Ort / Verlag

Germany: Wiley Subscription Services, Inc

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We disclose the intrinsic semiconducting properties of one of the largest mixed‐valent uranium clusters, [H3O+][UV(UVIO2)8(μ3‐O)6(PhCOO)2(Py(CH2O)2)4(DMF)4] (Ph=phenyl, Py=pyridyl, DMF=N,N‐dimethylformamide) (1). Single‐crystal X‐ray crystallography demonstrates that UV center is stabilized within a tetraoxo core surrounded by eight uranyl(VI) pentagonal bipyramidal centers. The oxidation states of uranium are substantiated by spectroscopic data and magnetic susceptibility measurement. Electronic spectroscopy and theory corroborate that UV species serve as electron donors and thus facilitate 1 being a n‐type semiconductor. With the largest effective atomic number among all reported radiation‐detection semiconductor materials, charge transport properties and photoconductivity were investigated under X‐ray excitation for 1: a large on‐off ratio of 500 and considerable charge mobility lifetime product of 2.3×10−4 cm2 V−1, as well as a high detection sensitivity of 23.4 μC Gyair−1 cm−2. The intrinsic semiconducting properties of one of the largest mixed‐valent uranium(V/VI) clusters are presented. It shows a large on‐off ratio of 500 and considerable charge mobility lifetime product of 2.3×10−4 cm2 V−1, as well as a high detection sensitivity of 23.4 μC Gyair−1 cm−2 under X‐ray excitation.