Details

Autor(en) / Beteiligte

• Kim, Minseong
• Seo, Jihyung
• Kim, Jihyun
• Moon, Jong Sung
• Lee, Junghyun
• Kim, Je-Hyung
• Kang, Joohoon
• Park, Hyesung

Titel

High-Crystalline Monolayer Transition Metal Dichalcogenides Films for Wafer-Scale Electronics

Ist Teil von

• ACS nano, 2021-02, Vol.15 (2), p.3038-3046

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Chemical vapor deposition (CVD) using liquid-phase precursors has emerged as a viable technique for synthesizing uniform large-area transition metal dichalcogenide (TMD) thin films. However, the liquid-phase precursor-assisted growth process typically suffers from small-sized grains and unreacted transition metal precursor remainders, resulting in lower-quality TMDs. Moreover, synthesizing large-area TMD films with a monolayer thickness is also quite challenging. Herein, we successfully synthesized high-quality large-area monolayer molybdenum diselenide (MoSe2) with good uniformity via promoter-assisted liquid-phase CVD process using the transition metal-containing precursor homogeneously modified with an alkali metal halide. The formation of a reactive transition metal oxyhalide and reduction of the energy barrier of chalcogenization by the alkali metal promoted the growth rate of the TMDs along the in-plane direction, enabling the full coverage of the monolayer MoSe2 film with negligible few-layer regions. Note that the fully selenized monolayer MoSe2 with high crystallinity exhibited superior electrical transport characteristics compared with those reported in previous works using liquid-phase precursors. We further synthesized various other monolayer TMD films, including molybdenum disulfide, tungsten disulfide, and tungsten diselenide, to demonstrate the broad applicability of the proposed approach.