Details

Autor(en) / Beteiligte

• Omaña, Alvaro A.
• Green, Rachel K.
• Kobayashi, Ryo
• He, Yingjie
• Antoniuk, Evan R.
• Ferguson, Michael J.
• Zhou, Yuqiao
• Veinot, Jonathan G. C.
• Iwamoto, Takeaki
• Brown, Alex
• Rivard, Eric

Titel

Frustrated Lewis Pair Chelation as a Vehicle for Low‐Temperature Semiconductor Element and Polymer Deposition

Ist Teil von

• Angewandte Chemie International Edition, 2021-01, Vol.60 (1), p.228-231

Auflage

International ed. in English

Ort / Verlag

Germany: Wiley Subscription Services, Inc

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The stabilization of silicon(II) and germanium(II) dihydrides by an intramolecular Frustrated Lewis Pair (FLP) ligand, PB, iPr2P(C6H4)BCy2 (Cy=cyclohexyl) is reported. The resulting hydride complexes [PB{SiH2}] and [PB{GeH2}] are indefinitely stable at room temperature, yet can deposit films of silicon and germanium, respectively, upon mild thermolysis in solution. Hallmarks of this work include: 1) the ability to recycle the FLP phosphine‐borane ligand (PB) after element deposition, and 2) the single‐source precursor [PB{SiH2}] deposits Si films at a record low temperature from solution (110 °C). The dialkylsilicon(II) adduct [PB{SiMe2}] was also prepared, and shown to release poly(dimethylsilane) [SiMe2]n upon heating. Overall, this study introduces a “closed loop” deposition strategy for semiconductors that steers materials science away from the use of harsh reagents or high temperatures. We use a phosphinoborane frustrated Lewis pair (FLP) ligand to stabilize ER2 species (E=Si, Ge; R=H or Me) for the subsequent deposition of semiconducting elements and polymers from solution. The ability to recycle the FLP phosphine‐borane ligand after element deposition is also demonstrated.