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The voltage responsivity of videodetectors using submicron GaAs Schottky diodes has been investigated in the 0.7 - 3.7 THz range. Incident submillimeter power level, DC bias and video-load influences are discussed within the framework of existing theories. Various diode types differing in semiconductor parameter values as well as junction geometries are compared. The submillimeter frequency response is studied and interpreted in terms of plasma resonance effects in the epilayer.