Details

Autor(en) / Beteiligte

• Wang, Jun-Feng
• Yan, Fei-Fei
• Li, Qiang
• Liu, Zheng-Hao
• Liu, He
• Guo, Guo-Ping
• Guo, Li-Ping
• Zhou, Xiong
• Cui, Jin-Ming
• Wang, Jian
• Zhou, Zong-Quan
• Xu, Xiao-Ye
• Xu, Jin-Shi
• Li, Chuan-Feng
• Guo, Guang-Can

Titel

Coherent Control of Nitrogen-Vacancy Center Spins in Silicon Carbide at Room Temperature

Ist Teil von

• Physical review letters, 2020-06, Vol.124 (22), p.1-223601, Article 223601

Ort / Verlag

College Park: American Physical Society

Erscheinungsjahr

2020

Quelle

PROLA

Beschreibungen/Notizen

• Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration sixfold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature, and the coherence time T2 can be reached to around 17.1 μs. Furthermore, an investigation of fluorescence properties of single NV centers shows that they are room-temperature photostable single-photon sources at telecom range. Taking advantage of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.