Details

Autor(en) / Beteiligte

• Vasquez, R P
• Lewis, B F
• Grunthaner, F J

Titel

X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs (100) molecular beam epitaxial substrates in in situ heating

Ist Teil von

• Applied physics letters, 1983, Vol.42 (3), p.293-295

Erscheinungsjahr

1983

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H sub(2)SO sub(4)/H sub(2)O sub(2)/H sub(2)O, followed by in situ heating prior to MBE growth. X-ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As super(+5). Upon heating to low temperatures ( < 350 degree C) the As super(+5) oxidizes the substrate to form Ga sub(2)O sub(3) and elemental As (As super(0)), and the As super(+5) is reduced to As super(+3) in the process. At higher temperatures (500 degree C), the As super(+3) and As super(0) desorb, while the Ga super(+3) begins desorbing at similar to 600 degree C.