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Nanoscale Correlations between Metal–Insulator Transition and Resistive Switching Effect in Metallic Perovskite Oxides
Ist Teil von
Small (Weinheim an der Bergstrasse, Germany), 2020-06, Vol.16 (23), p.e2001307-n/a
Ort / Verlag
Germany: Wiley Subscription Services, Inc
Erscheinungsjahr
2020
Quelle
Wiley Online Library E-Journals
Beschreibungen/Notizen
Strongly correlated perovskite oxides are a class of materials with fascinating intrinsic physical functionalities due to the interplay of charge, spin, orbital ordering, and lattice degrees of freedom. Among the exotic phenomena arising from such an interplay, metal–insulator transitions (MITs) are fundamentally still not fully understood and are of large interest for novel nanoelectronics applications, such as resistive switching‐based memories and neuromorphic computing devices. In particular, rare‐earth nickelates and lanthanum strontium manganites are archetypical examples of bandwidth‐controlled and band‐filling‐controlled MIT, respectively, which are used in this work as a playground to correlate the switching characteristics of the oxides and their MIT properties by means of local probe techniques in a systematic manner. These findings suggest that an electric‐field‐induced MIT can be triggered in these strongly correlated systems upon generation of oxygen vacancies and establish that lower operational voltages and larger resistance ratios are obtained in those films where the MIT lies closer to room temperature. This work demonstrates the potential of using MITs in the next generation of nanoelectronics devices.
This work originally addresses the role of chemical substitution in tuning the metal–insulator transition (MIT) and the associated changes in the intrinsic resistive switching (RS) parameters in two strongly correlated systems, lanthanum strontium manganites (band‐filling‐controlled MIT) and rare‐earth nickelates (bandwidth‐controlled MIT) through scanning probe microscopy. These findings can help to optimize RS devices based on metallic complex oxides.