ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.357-362
1992
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Details
- Autor(en) / Beteiligte
- Titel
- Avoiding dislocations in ion-implanted silicon
- Ist Teil von
- ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.357-362
- Ort / Verlag
- Elsevier B.V
- Erscheinungsjahr
- 1992
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desirable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 9780444894786, 0444894780ISSN: 0167-9317eISSN: 1873-5568DOI: 10.1016/0167-9317(92)90453-XTitel-ID: cdi_proquest_miscellaneous_23856629
- Format
- –
- Schlagworte
- Atomic measurements, Implants, Impurities, Ion implantation, Microelectronics, Physics, Rapid thermal annealing, Silicon, Thermal degradation, Thermal engineering