Details

Autor(en) / Beteiligte

• Greene, J. E.
• Eltoukhy, A. H.

Titel

Semiconductor crystal growth by sputter deposition

Ist Teil von

• Surface and interface analysis, 1981-02, Vol.3 (1), p.34-54

Ort / Verlag

London: Heyden & Son Ltd

Erscheinungsjahr

1981

Link zum Volltext

Quelle

Wiley Online Library Journals Frontfile Complete

Beschreibungen/Notizen

• Recently, understanding of the physics of ion–surface interactions has progressed sufficiently to allow sputter deposition to be used as a crystal growth technique for depositing a wide variety of single crystal elemental, compound, alloy, and superlattice semiconductors. In many cases, films with essentially bulk values of carrier concentrations and mobilities have been obtained. The controlled use of low energy particle bombardment of the growing film during sputter deposition has been shown to affect all stages of crystal growth ranging from adatom mobilities and nucleation kinetics to elemental incorporation probabilities. Such effects provide inherent advantages for sputter deposition over other vapor phase techniques for the low temperature growth of compound and alloy semiconductors and are essential in allowing the growth of new and unique single crystal metastable semiconductors. This review includes sections on the physics of sputtering, experimental techniques, and ion bombardment effects on film growth as well as a discussion of recent results in the growth of elemental, III–V, II–VI, IV–VI, metastable, and other compound semiconductors.