Details

Autor(en) / Beteiligte

• Zhao, Menghan
• Xue, Zhongying
• Zhu, Wei
• Wang, Gang
• Tang, Shiwei
• Liu, Zhiduo
• Guo, Qinglei
• Chen, Da
• Chu, Paul K
• Ding, Guqiao
• Di, Zengfeng

Titel

Interface Engineering-Assisted 3D-Graphene/Germanium Heterojunction for High-Performance Photodetectors

Ist Teil von

• ACS applied materials & interfaces, 2020-04, Vol.12 (13), p.15606-15614

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Three-dimensional graphene (3D-Gr) with excellent light absorption properties has received enormous interest, but in conventional processes to prepare 3D-Gr, amorphous carbon layers are inevitably introduced as buffer layers that may degrade the performance of graphene-based devices. Herein, 3D-Gr is prepared on germanium (Ge) using two-dimensional graphene (2D-Gr) as the buffer layer. 2D-Gr as the buffer layer facilitates the in situ synthesis of 3D-Gr on Ge by plasma-enhanced chemical vapor deposition (PECVD) by promoting 2D-Gr nucleation and reducing the barrier height. The growth mechanism is investigated and described. The enhanced light absorption as confirmed by theoretical calculation and 3D-Gr/2D-Gr/Ge with a Schottky junction improves the performance of optoelectronic devices without requiring pre- and post-transfer processes. The photodetector constructed with 3D-Gr/2D-Gr/Ge shows an excellent responsivity of 1.7 A W–1 and detectivity 3.42 × 1014 cm Hz1/2 W–1 at a wavelength of 1550 nm. This novel hybrid structure that incorporates 3D- and 2D-Gr into Ge-based integrated circuits and photodetectors delivers excellent performance and has large commercial potential.