Details

Autor(en) / Beteiligte

• Besomi, Paul
• Wessels, Bruce W.

Titel

High-conductivity heteroepitaxial ZnSe films

Ist Teil von

• Applied physics letters, 1980-11, Vol.37 (10), p.955-957

Erscheinungsjahr

1980

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 1014–1016 cm−3 and resistivities of 1–103 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.