Details

Autor(en) / Beteiligte

• Pasemann, L.

Titel

A contribution to the theory of the ebic contrast of lattice defects in semiconductors

Ist Teil von

• Ultramicroscopy, 1981, Vol.6 (3), p.237-250

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

1981

Quelle

Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)

Beschreibungen/Notizen

• Using the model of a bounded defect region characterized by a constant lifetime of the minority carriers which is lower than that outside the defect the contrast is obtained as an infinite series (perturbation expansion), the sum of which can be estimated in the case of a dislocation of infinite length if the dimension of the dislocation region perpendicular to the dislocation line is assumed to be much less than the diffusion length of the minority carriers of the defect-free semiconductor. For a point-like excitation on the surface of a sample with a junction parallel to the surface the dislocation contrast is computed as a function of the position of the dislocation for different values of both the “strength” of the dislocation and the surface recombination velocity.