Details

Autor(en) / Beteiligte

• Sadana, D. K.
• Washburn, J.
• Zee, T.
• Wilson, R. G.

Titel

Effect of oxygen on chromium-structural defects interaction in ion-implanted gallium arsenide

Ist Teil von

• Journal of applied physics, 1982-09, Vol.53 (9), p.6413-6417

Erscheinungsjahr

1982

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The redistribution of chromium in gallium arsenide implanted with either gallium and arsenic or gallium, arsenic, and oxygen and subsequently furnace annealed was studied by secondary ion mass spectrometry. The depth distribution of the residual damage was obtained by cross-sectional transmission electron microscopy. At annealing temperatures of ⩽600 °C, there was a one to one depth correlation between the positions of the damage layers and peaks in the atomic profile of chromium. However, at annealing temperatures of ⩾800 °C such correlations were complicated by oxidation effects.