Details

Autor(en) / Beteiligte

• Lee, Kyoungjun
• Lee, Hyun-Jae
• Lee, Tae Yoon
• Lim, Hong Heon
• Song, Myeong Seop
• Yoo, Hyang Keun
• Suh, Dong Ik
• Lee, Jae Gil
• Zhu, Zhongwei
• Yoon, Alexander
• MacDonald, Matthew R
• Lei, Xinjian
• Park, Kunwoo
• Park, Jungwon
• Lee, Jun Hee
• Chae, Seung Chul

Titel

Stable Subloop Behavior in Ferroelectric Si-Doped HfO2

Ist Teil von

• ACS applied materials & interfaces, 2019-10, Vol.11 (42), p.38929-38936

Ort / Verlag

American Chemical Society

Erscheinungsjahr

2019

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The recent demand for analogue devices for neuromorphic applications requires modulation of multiple nonvolatile states. Ferroelectricity with multiple polarization states enables neuromorphic applications with various architectures. However, deterministic control of ferroelectric polarization states with conventional ferroelectric materials has been met with accessibility issues. Here, we report unprecedented stable accessibility with robust stability of multiple polarization states in ferroelectric HfO2. Through the combination of conventional voltage measurements, hysteresis temperature dependence analysis, piezoelectric force microscopy, first-principles calculations, and Monte Carlo simulations, we suggest that the unprecedented stability of intermediate states in ferroelectric HfO2 is due to the small critical volume size for nucleation and the large activation energy for ferroelectric dipole flipping. This work demonstrates the potential of ferroelectric HfO2 for analogue device applications enabling neuromorphic computing.