Details

Autor(en) / Beteiligte

• Duong, Ngoc Thanh
• Lee, Juchan
• Bang, Seungho
• Park, Chulho
• Lim, Seong Chu
• Jeong, Mun Seok

Titel

Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation

Ist Teil von

• ACS nano, 2019-04, Vol.13 (4), p.4478-4485

Ort / Verlag

American Chemical Society

Erscheinungsjahr

2019

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Various functional devices including p-n forward, backward, and Zener diodes are realized with a van der Waals heterostructure that are composed of molybdenum disulfide (MoS2) and molybdenum ditelluride (MoTe2) by changing the thickness of the MoTe2 layer and common gate bias. In addition, the available negative differential transconductance of the heterostructure is utilized to fabricate a many-valued logic device that exhibits three different logic states (i.e., a ternary inverter). Furthermore, the multivalued logic device can be transformed into a binary inverter using laser irradiation. This work provides a comprehensive understanding of the device fabrication and electronic-device design utilizing thickness control.