Details

Autor(en) / Beteiligte

• Tu, Bao
• Shao, Yangfan
• Chen, Wei
• Wu, Yinghui
• Li, Xin
• He, Yanling
• Li, Jiaxing
• Liu, Fangzhou
• Zhang, Zheng
• Lin, Yi
• Lan, Xiaoqi
• Xu, Leiming
• Shi, Xingqiang
• Ng, Alan Man Ching
• Li, Haifeng
• Chung, Lung Wa
• Djurišić, Aleksandra B.
• He, Zhubing

Titel

Novel Molecular Doping Mechanism for n‐Doping of SnO2 via Triphenylphosphine Oxide and Its Effect on Perovskite Solar Cells

Ist Teil von

• Advanced materials (Weinheim), 2019-04, Vol.31 (15), p.e1805944-n/a

Ort / Verlag

Weinheim: Wiley Subscription Services, Inc

Erscheinungsjahr

2019

Quelle

Wiley-Blackwell subscription journals

Beschreibungen/Notizen

• Molecular doping of inorganic semiconductors is a rising topic in the field of organic/inorganic hybrid electronics. However, it is difficult to find dopant molecules which simultaneously exhibit strong reducibility and stability in ambient atmosphere, which are needed for n‐type doping of oxide semiconductors. Herein, successful n‐type doping of SnO2 is demonstrated by a simple, air‐robust, and cost‐effective triphenylphosphine oxide molecule. Strikingly, it is discovered that electrons are transferred from the R3P+O−σ‐bond to the peripheral tin atoms other than the directly interacted ones at the surface. That means those electrons are delocalized. The course is verified by multi‐photophysical characterizations. This doping effect accounts for the enhancement of conductivity and the decline of work function of SnO2, which enlarges the built‐in field from 0.01 to 0.07 eV and decreases the energy barrier from 0.55 to 0.39 eV at the SnO2/perovskite interface enabling an increase in the conversion efficiency of perovskite solar cells from 19.01% to 20.69%. An n‐doping of SnO2 is successfully realized through the use of the triphenylphosphine‐oxide molecule, where electrons are revealed to be transferred from the R3P+O− σ‐bond to the peripheral tin atoms and delocalized. That novel effect enlarges the built‐in‐field from 0.01 to 0.07 eV and reduces the energy‐barrier from 0.55 to 0.39 eV at the SnO2–perovskite interface enabling a device conversion‐efficiency from 19.01% to 20.69%.