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Bi2Te3 is a well-studied material because of its thermoelectric properties and, recently, has also been studied as a topological insulator. However, it is only one of several compounds in the Bi–Te system. This work presents a study of the physical vapor transport growth of Bi–Te material focused on determining the growth conditions required to selectively obtain a desired phase of the Bi–Te system, i.e., Bi2Te3, BiTe, and Bi4Te3. Epitaxial films of these compounds were prepared on sapphire and silicon substrates. The results were verified by X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectrometry.
Sprache
Englisch
Identifikatoren
ISSN: 0020-1669
eISSN: 1520-510X
DOI: 10.1021/acs.inorgchem.8b01235
Titel-ID: cdi_proquest_miscellaneous_2081544731
Format
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