Details

Autor(en) / Beteiligte

• Concepción, Omar
• Galván-Arellano, Miguel
• Torres-Costa, Vicente
• Climent-Font, Aurelio
• Bahena, Daniel
• Manso Silván, Miguel
• Escobosa, Arturo
• de Melo, Osvaldo

Titel

Controlling the Epitaxial Growth of Bi2Te3, BiTe, and Bi4Te3 Pure Phases by Physical Vapor Transport

Ist Teil von

• Inorganic chemistry, 2018-08, Vol.57 (16), p.10090-10099

Ort / Verlag

American Chemical Society

Erscheinungsjahr

2018

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Bi2Te3 is a well-studied material because of its thermoelectric properties and, recently, has also been studied as a topological insulator. However, it is only one of several compounds in the Bi–Te system. This work presents a study of the physical vapor transport growth of Bi–Te material focused on determining the growth conditions required to selectively obtain a desired phase of the Bi–Te system, i.e., Bi2Te3, BiTe, and Bi4Te3. Epitaxial films of these compounds were prepared on sapphire and silicon substrates. The results were verified by X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectrometry.