Details

Autor(en) / Beteiligte

• Wang, Zhi
• Zhang, Tongyao
• Ding, Mei
• Dong, Baojuan
• Li, Yanxu
• Chen, Maolin
• Li, Xiaoxi
• Huang, Jianqi
• Wang, Hanwen
• Zhao, Xiaotian
• Li, Yong
• Li, Da
• Jia, Chuankun
• Sun, Lidong
• Guo, Huaihong
• Ye, Yu
• Sun, Dongming
• Chen, Yuansen
• Yang, Teng
• Zhang, Jing
• Ono, Shimpei
• Han, Zheng
• Zhang, Zhidong

Titel

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor

Ist Teil von

• Nature nanotechnology, 2018-07, Vol.13 (7), p.554-559

Ort / Verlag

England: Nature Publishing Group

Erscheinungsjahr

2018

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Manipulating a quantum state via electrostatic gating has been of great importance for many model systems in nanoelectronics. Until now, however, controlling the electron spins or, more specifically, the magnetism of a system by electric-field tuning has proven challenging . Recently, atomically thin magnetic semiconductors have attracted significant attention due to their emerging new physical phenomena . However, many issues are yet to be resolved to convincingly demonstrate gate-controllable magnetism in these two-dimensional materials. Here, we show that, via electrostatic gating, a strong field effect can be observed in devices based on few-layered ferromagnetic semiconducting Cr Ge Te . At different gate doping, micro-area Kerr measurements in the studied devices demonstrate bipolar tunable magnetization loops below the Curie temperature, which is tentatively attributed to the moment rebalance in the spin-polarized band structure. Our findings of electric-field-controlled magnetism in van der Waals magnets show possibilities for potential applications in new-generation magnetic memory storage, sensors and spintronics.