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Capacitor Applications of Nanocomposite Films for Poly(3,4-ethylenedioxythiophene-co-pyrrole)/Multi-Walled Carbon Nanotubes and Poly(3,4-ethylenedioxythiophene-co-pyrrole)/Copper Oxide
Ist Teil von
Polymer-plastics technology and engineering, 2016-09, Vol.55 (14), p.1489-1502
Ort / Verlag
New York: Taylor & Francis
Erscheinungsjahr
2016
Quelle
Taylor & Francis
Beschreibungen/Notizen
Polypyrrole/multi-walled carbon nanotube, poly(3,4-ethylenedioxythiophene)/multi-walled carbon nanotube and their nanocomposites P(EDOT-co-Py)/multi-walled carbon nanotube and P(EDOT-co-Py)/copper (II) oxide, (CuO) in the initial feed ratio of [EDOT]
0
/[Py]
0
= 1/5 were electrosynthesized on glassy carbon electrode by cyclic voltammetric method. Their characterizations were performed by cyclic voltammetric, Fourier transform infrared-attenuated total reflectance, scanning electron microscopy, energy dispersion X-ray analysis, and electrochemical impedance spectroscopy. To the best of authors' knowledge, the first report on polypyrrole/multi-walled carbon nanotube, PEDOT/multi-walled carbon nanotube, P(EDOT-co-Py)/multi-walled carbon nanotube and P(EDOT-co-Py)/CuO nanocomposite films were comparatively examined in 0.1 M NaClO
4
/CH
3
CN and in 0.1 M sodium dodecyl sulfate solutions. The highest specific capacitance for PEDOT/multi-walled carbon nanotube and polypyrrole/multi-walled carbon nanotube composite films were obtained as C
sp
= 306 mF × cm
−2
for 3% multi-walled carbon nanotube and C
sp
= 804 mF × cm
−2
for 1% multi-walled carbon nanotube, respectively. The highest specific capacitances were obtained as C
sp
= 27.40 mF × cm
−2
and C
sp
= 26.90 mF × cm
−2
for P(EDOT-co-Py)/multi-walled carbon nanotube includes the wt percent of 1% multi-walled carbon nanotube and P(EDOT-co-Py)/CuO includes the wt percent of 3% CuO, respectively. The C
sp
of P(EDOT-co-Py)/CNT composite films were calculated as 9.43 and 11.49 mF × cm
−2
for 3 and 5% multi-walled carbon nanotube, respectively. In addition, The EIS results were simulated with the equivalent circuit model of R
s
(C
dl1
(R
1
(QR
2
)))(C
dl2
R
3
).