Details

Autor(en) / Beteiligte

• Arai, Y.
• Bugiel, Sz
• Dasgupta, R.
• Idzik, M.
• Kapusta, P.
• Kucewicz, W.
• Miyoshi, T.
• Turala, M.

Titel

Performance of the INTPIX6 SOI pixel detector

Ist Teil von

• Journal of instrumentation, 2017-01, Vol.12 (1), p.C01028-C01028

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 [mu] m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 x 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using super(241) Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e super(-). The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e super(-). The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.